Enhanced emission from THz antennas made of low-temperature-grown GaAs with annealed ohmic contacts

TitleEnhanced emission from THz antennas made of low-temperature-grown GaAs with annealed ohmic contacts
Publication TypeConference Publication
Year of publication2008
AuthorsVieweg, N., M. Mikulics, M. Scheller, K. Ezdi, R. Wilk, H. W. Hübers, and M. Koch
Conference nameIRMMW/THz 2008
Conference locationPasadena, USA
Date published09/2008
Abstract

We present a systematic study of annealed ohmic contacts and their effect on the performance of THz antennas. Annealing of the ohmic contact causes a strong decrease in the contact resistance and an enhancement of the electric field distribution inside the antenna structure. This doubles the output power of the devices compared to conventional photoconductors with standard Schottky-type metallization fabricated on an identical material.